Photoetching of InP mesas for production of mm-wave transferred-electron oscillators

Abstract

A novel technique for fabricating small-diameter mesa-shaped structures on semiconducting substrates is described. The mesas, which are formed by etching and selective illumination of the substrate, show very little undercutting. The technique is suited for fabricating InP and GaAs transferred-electron oscillators, as well as impatt-diode structures for millimetre-wave sources.