Publication | Closed Access
Experimental determination of finite inversion layer thickness in thin gate oxide MOSFETS
27
Citations
2
References
1986
Year
Device ModelingElectrical EngineeringEngineeringExperimental DeterminationNanoelectronicsBias Temperature InstabilityOxide ElectronicsApplied PhysicsMicroelectronicsThin GateSemiconductor Device
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