Ni on Si(111): Reactivity and Interface Structure

Abstract

The megaelectronvolt ion-channeling technique has been applied to the study of the Ni-Si interface. The Ni-Si interface, prepared under UHV conditions at ambient temperature, shows an interfacial region containing \ensuremath{\sim}1\ifmmode\times\else\texttimes\fi{}${10}^{16}$ atoms/${\mathrm{cm}}^{2}$ of nonregistered Si. A measurement of the temperature dependence of the interfacial reactivity emphasizes the kinetic nature of the Ni-Si interface and the importance of Schottky-barrier height measurements at low temperatures for meaningful comparison with abrupt metal-semicon-ductor interface models.