Electrical Properties of p- and n-GaSe Doped with As and Ge

Abstract

Hall effect measurements are carried out to study the carrier transport of GaSe doped with amphoteric impurities. The p-and n-type conductions were obtained for the As- and Ge-doped samples, respectively. The carrier transports in the As- and Ge-doped samples are associated with the deep acceptor level at 0.54 eV above the valence band and the deep donor level at 0.58 eV below the conduction band, respectively.