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Metal–<i>n</i>-6H–SiC surface barrier height—Experimental data and description in the traditional terms
15
Citations
8
References
1995
Year
Materials EngineeringMaterials ScienceTraditional TermsEnergy Band GapEngineeringSurface Barrier HeightSemiconductor TechnologyBarrier HeightSurface CharacterizationSurface AnalysisSurface ScienceApplied PhysicsSurface EngineeringSemiconductor MaterialStructural CeramicCarbide
This work compares our experimental data on surface barrier height in structures metal–n-6H–SiC for several metals (Al, Au, Mo, Cr) with other data available and with classical models of surface barrier formation. We observed decreasing of barrier height with increasing of donors concentration for the structures Au–n-6H–SiC, Mo–n-6H–SiC and Al–n-6H–SiC. We estimate the average surface energy level for (0001)-Si-faced n-6H–SiC, appearing in capacitance–voltage (C–V) measurements, to be about 0.3Eg at room temperature (Eg is the energy band gap) and corresponding surface states density to be about 1013 cm−2 eV−1, based both on our data and data of other authors.
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