Effect of indium impurities on the electrical properties of amorphous Ga₃₀Se₇₀

Abstract

Temperature dependences of the dark conductivity and the photoconductivity for amorphous thin films of Ga30Se70-xInx in the temperature range 298-328 K have been reported. The dark conductivity and the photoconductivity increase at all temperatures as the concentration of In (x=0, 5, 10, 15 and 20) increases. The results are interpreted in terms of the shift of Fermi level in impurity-incorporated amorphous Ga30Se70 binary alloy.