Applied Physics Letters · 1977 · 27 citations · 5 references
Natural SciencesMaterials EngineeringMaterials ScienceMaterials CharacterizationMechanical Behavior Of MaterialsSemiconductor MaterialsCreep BehaviorCreep DeformationElastic DeformationPlastic DeformationSilicon MaterialsStress-strain BehaviorCreep MechanismsPlastic Deformation BehaviorSemiconductor TechnologySiliconSilicon WafersSingle-crystal SiliconStress Dependence Of CreepStress-dependent Creep
A new method of performing a creep test on silicon single crystals is described. The experiment utilizes silicon wafers. The stress applied to the wafers is provided by a Si3N4 film deposited by chemical vapor deposition on the front side of the wafer. The samples, i.e., silicon wafers with superposed Si3N4 films, are annealed in a quartz tube at 1000–1100 °C. The creep curves obtained are classified into two types according to stress. One type is related to plastic deformation of the wafer; the other is an elastic deformation. These results are available for the use of Si3N4 film in semiconductor technology.
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