High-temperature (130°C) CW operation of 1.53 μm InGaAsP ridge-waveguide lasers using strained quaternary quantum wells

Abstract

Minimum threshold current density of 0.57kA/cm2 and high T0 values up to 74K were obtained from 400μm long broad area lasers with MOVPE grown compressively strained all-quaternary GaInAsP SCH-MQW layer structures for 1.53μm emission wavelength. With 3μm×400μm RW laserdiodes (T0>90K) high-temperature CW operation up to 130°C was achieved.