Raman Spectroscopic Study of Gallium‐Doped Ba(Zn _1/3 Ta _2/3 )O ₃

Abstract

Resonators of Ba(Zn 1/3 Ta 2/3 )O 3 , sintered between 1450° and 1600°C, are characterized by Raman spectroscopy, X‐ray diffraction, and scanning electron microscopy. The quality factors of the resonators are found to depend on sintering temperature, and at 1600°C there is evidence of Zn loss from the surface. The frequency of the A 1g Raman mode changes from 800.9 cm −1 for a sample with Q = 80000 (2 GHz), to 794.5 cm −1 when Q = 44000 (2 GHz). Changes in the position of this and other Raman modes are thought to be due to distortions of the oxygen octahedra, brought about by Zn loss. The presence of a BaTa 2 O 6 phase at the surface is confirmed by XRD and SEM.