Single crystalline bulk growth of In0.3Ga0.7As on GaAs seed using the multi-component zone melting method

Etching of Dislocations on the Low-Index Faces of GaAs

M. S. Abrahams, C. J. Buiocchi · Journal of Applied Physics · 1965 · 338 citations

Natural Sciences, Materials Engineering, Materials Science +17

Theoretical gain of strained quantum well grown on an InGaAs ternary substrate

Hiroshi Ishikawa · Applied Physics Letters · 1993 · 74 citations

Engineering, Materials Engineering, Materials Science +17

High <i>T</i> ₀ (140 K) and low-thresholdlong-wavelength strainedquantum well lasers on InGaAs ternary substrates

Kazuya Otsubo, H. Shōji, T. Kusunoki et al. · Electronics Letters · 1997 · 50 citations

Engineering, Electrical Engineering, Materials Science +16

Constant temperature LEC growth of InGaAs ternary bulk crystals using the double crucible method

Kazuo Nakajima, T. Kusunoki · Journal of Crystal Growth · 1996 · 40 citations

Natural Sciences, Materials Science, Physics +14

Multicomponent zone melting growth of ternary InGaAs bulk crystal

Toshihiko Suzuki, K. Nakajima, T. Kusunoki et al. · Journal of Electronic Materials · 1996 · 39 citations

Natural Sciences, Materials Engineering, Materials Science +12