Constant temperature LEC growth of InGaAs ternary bulk crystals using the double crucible method

Theoretical gain of strained quantum well grown on an InGaAs ternary substrate

Hiroshi Ishikawa · Applied Physics Letters · 1993 · 74 citations

Engineering, Materials Engineering, Materials Science +17

Analysis of temperature dependent optical gain of strained quantum well taking account of carriers in the SCH layer

Hiroshi Ishikawa, I. Suemune · IEEE Photonics Technology Letters · 1994 · 55 citations

Engineering, Materials Science, Physics +17

Growth of ternary InxGa1−xAs bulk crystals with a uniform composition through supply of GaAs

Kazuo Nakajima, T. Kusunoki, Chisato Takenaka · Journal of Crystal Growth · 1991 · 51 citations

Natural Sciences, Materials Engineering, Materials Science +13

Fabrication of In/sub 0.25/Ga/sub 0.75/As/InGaAsP strained SQW lasers on In/sub 0.05/Ga/sub 0.95/As ternary substrate

H. Shōji, T. Uchida, T. Kusunoki et al. · IEEE Photonics Technology Letters · 1994 · 35 citations

Engineering, Electrical Engineering, Materials Science +17

Growth of ternary In0.14Ga0.86As bulk crystal with uniform composition at constant temperature through GaAs supply

T. Kusunoki, Chisato Takenaka, Kazuo Nakajima · Journal of Crystal Growth · 1991 · 31 citations

Natural Sciences, Materials Engineering, Materials Science +17