Applied Physics Letters · 1985 · 113 citations · 16 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsInterface ScienceSemiconductor MaterialsDevice CharacterizationElectrical CharacterizationSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesCapacitance-voltage CharacteristicsCapacitance-voltage CharacterizationCapacitance-voltage MeasurementsInterface Charge TransportInterfacial Charge DensitySemiconductor CharacterizationSemiconductor Device CharacterizationSemiconductor Heterojunctions
The relation between the conduction-band discontinuity ΔEc and the Al composition x of refined GaAs/AsxGa1−xAs (x<0.42) heterointerfaces was determined by means of capacitance-voltage measurements. The resulting relation, ΔEc=0.67ΔEg, is different from Dingle’s rule. The interface charge density σ of a series of the samples was also investigated in relation to the reliability of the determination of ΔEc. It was found that σ less than 1×1011/cm2 is required to determine ΔEc with the precision of ±10 meV.
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E. A. Kraut, R. W. Grant, J. R. Waldrop et al. · Physical Review Letters · 1980 · 1.5K citations
Natural Sciences, Materials Engineering, Materials Science +17
R. People, K. W. Wecht, K. Alavi et al. · Applied Physics Letters · 1983 · 240 citations