IEEE Electron Device Letters · 2012 · 31 citations · 11 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesField-effect TransistorsNanowiresNoise In Electronic DevicesNoise In Semiconductor DevicesSemiconductor PhysicsSemiconductor ReliabilityHot Carrier EffectsHot-carrier DegradationLow-frequency NoiseMosfet NoiseNanowire DevicesNanowire Field-effect TransistorsNanowire TransistorsStress
The dc performance and low-frequency (LF) noise behaviors after hot-carrier (HC)-induced stress were compared for a junctionless nanowire transistor (JNT) and an inversion-mode nanowire transistor (INT). Less dc degradation was found in the JNT than in the INT. Due to the low lateral peak electric field (E-field) and electrons traveling through the center of the nanowire, the LF noise increment after HC-induced stress in the JNT is much lower than that in the INT. Furthermore, due to the higher lateral peak E-field located under the gate and the conduction path that occurs near the surface, the LF noise of the INT is very sensitive to HC stress.
11
Nanowire transistors without junctions
Jean-Pierre Colinge, Chi‐Woo Lee, Aryan Afzalian et al. · Nature Nanotechnology · 2010 · 2.4K citations
Junctionless multigate field-effect transistor
Chi‐Woo Lee, Aryan Afzalian, Nima Dehdashti Akhavan et al. · Applied Physics Letters · 2009 · 925 citations · Full text
Performance estimation of junctionless multigate transistors
Chi‐Woo Lee, Isabelle Ferain, Aryan Afzalian et al. · Solid-State Electronics · 2009 · 556 citations · Full text
Engineering, Computer Engineering, Electrical Engineering +13
On the flicker noise in submicron silicon MOSFETs
E. Simoen, C. Claeys · Solid-State Electronics · 1999 · 304 citations