Applied Physics Letters · 1982 · 58 citations · 15 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor InterfacesSemiconductor LasersSemiconductor PhysicsWide Band Gap SemiconductorsCurrent DensityDouble Heterostructure DevicesDouble HeterostructuresHeterostructure DevicesHeterostructure LasersHeterostructure MaterialsLaser ThresholdMolecular Beam Epitaxy
We report the first direct observation of deep levels associated with the n-GaAs/N-Al0.25Ga0.75As heterointerface in a double heterostructure (DH) laser grown by molecular beam epitaxy (MBE). The concentration of these states in a nonoptimum device having a high threshold current density is 3×1010 cm−2. The states have an average energy of Ec−0.66 eV and appear to be localized in the n-GaAs within 140 Å of the interface. The relationship of these states to the laser threshold is discussed.
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