IEEE Journal of Quantum Electronics · 2000 · 12 citations · 22 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesDevice CharacterizationLaser DiodesLaser OpticsPhotonic Integrated CircuitsSemiconductor HeterostructuresSemiconductor LasersHigh-power Laser DiodesLongitudinal Mode AnalysisSemiconductor Laser Diodes
We have carried out a systematic experimental study of the longitudinal-mode characteristics of 980-nm laser diodes with a weakly index-guided buried-stripe structure at high optical output powers. For comparison, we have prepared devices with 1.5- and 2.5-/spl mu/m cladding layers. We found large differences in the longitudinal-mode characteristics and light output linearity between the two types of devices. We think that these differences result from whether or not there is coupling between the ordinary laser-mode and an unusual substrate-mode. In addition, our results show an improvement in laser diode characteristics when the substrate-mode is suppressed.
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