Publication | Closed Access
Degradation behavior of 0.98-μm strained quantum well InGaAs/AlGaAs lasers under high-power operation
100
Citations
18
References
1994
Year
Wide-bandgap SemiconductorOptical MaterialsEngineeringLaser PhysicsLaser ApplicationsLaser MaterialIngaas/algaas LasersHigh-power LasersLaser ControlLaser OpticsSemiconductor LasersOptical PropertiesDegradation BehaviorFacet Coating FilmsMaterials ScienceLaser Processing TechnologyLaser Design0.98-μM Strained QuantumLaser ClassificationAdvanced Laser ProcessingApplied PhysicsLaser SafetyOptoelectronicsLaser Damage
The degradation behavior of 0.98-/spl mu/m strained quantum well (QW) InGaAs/AlGaAs lasers with facet coating films is systematically clarified at high-power operations of more than 100 mW/facet. The degradation is mainly caused by the instability of the interface between the laser material (facet) and the antireflecting (AR) coating film. This phenomenon is associated with a high rate of facet oxidation and generation of instantaneous catastrophic optical damage (COD) at a relatively low optical output power in lasers without facet coating films. Throughout the clarification of those phenomena, the main reliability problem in 0.98-/spl mu/m strained QW lasers under high output power operation is clarified.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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