Chemical contribution of oxygen to silicon carbide plasma etching kinetics in a distributed electron cyclotron resonance (DECR) reactor

Reactive ion etching of SiC thin films using fluorinated gases

J. Sugiura, W. Lu, Ken Cadien et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1986 · 100 citations

Natural Sciences, Materials Engineering, Materials Science +17

Dry etching of β-SiC in CF4 and CF4+O2 mixtures

John W. Palmour, R. F. Davis, T. M. Wallett et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1986 · 73 citations

Natural Sciences, Materials Engineering, Materials Science +17

Reactive ion etching of monocrystalline, polycrystalline, and amorphous silicon carbide in CF4/O2 mixtures

R. Padiyath, Robert L. Wright, M. I. Chaudhry et al. · Applied Physics Letters · 1991 · 68 citations

Natural Sciences, Materials Engineering, Materials Science +17

Effects of Hydrogen Additive on Obtaining Residue‐Free Reactive Ion Etching of β ‐ SiC in Fluorinated Plasmas

P. H. Yih, A. J. Steckl · Journal of The Electrochemical Society · 1993 · 48 citations

Natural Sciences, Materials Engineering, Materials Science +16

Profile and Morphology Control during Etching of SiC Using Electron Cyclotron Resonant Plasmas

J. R. Flemish, Kelvin Y. Xie · Journal of The Electrochemical Society · 1996 · 38 citations

Engineering, Materials Engineering, Materials Science +13