A Single-Chip Bluetooth EDR Device in 0.13¿m CMOS

B. Marholev, M. Pan, E. Chien, L. Zhang, Rozi Roufoogaran, S. Wu, I. Bhatti, T. H. Lin, Martin Kappes, S. Khorram,

Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 2007 · 27 citations · 6 references

Concepts

Abstract

A low-power single-chip Bluetooth EDR device is realized using a configurable transformer-based RF front-end, a low-IF receiver and direct-conversion transmitter architecture. It is implemented in a 0.13mum CMOS process and occupies 11.8mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . Sensitivity for 1, 2 and 3Mb/s rates is -88, -90, and -84dBm and transmitter differential EVM is 5.5% rms.

References

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