A Single-Chip Bluetooth EDR Device in 0.13¿m CMOS

Abstract

A low-power single-chip Bluetooth EDR device is realized using a configurable transformer-based RF front-end, a low-IF receiver and direct-conversion transmitter architecture. It is implemented in a 0.13mum CMOS process and occupies 11.8mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . Sensitivity for 1, 2 and 3Mb/s rates is -88, -90, and -84dBm and transmitter differential EVM is 5.5% rms.