Identification of oxygen and zinc vacancy optical signals in ZnO

Abstract

Photoluminescence spectroscopy has been used to study single crystalline ZnO samples systematically annealed in inert, Zn-rich and O-rich atmospheres. A striking correlation is observed between the choice of annealing ambient and the position of the deep band emission (DBE) often detected in ZnO. In particular, annealing in O2 results in a DBE at 2.35±0.05eV, whereas annealing in the presence of metallic Zn results in DBE at 2.53±0.05eV. The authors attribute the former band to zinc vacancy (VZn) related defects and the latter to oxygen vacancy (VO) related defects. Additional confirmation for the VO and VZn peak identification comes from the observation that the effect is reversible when O- and Zn-rich annealing conditions are switched. After annealing in the presence of ZnO powder, there is no indication for the VZn- or VO-related bands, but the authors observe a low intensity yellow luminescence band peaking at 2.17eV, probably related to Li, a common impurity in hydrothermally grown ZnO.