Publication | Closed Access
Numerical and experimental results correlation during power MOSFET ageing
11
Citations
3
References
2012
Year
Unknown Venue
Device ModelingVertical Power MosfetElectrical EngineeringPower Mosfet AgeingEngineeringHardware ReliabilityLongevityPhysic Of FailureBias Temperature InstabilityElectro-thermal SimulationCircuit ReliabilityPower ElectronicsHeat TransferMicroelectronicsSource TerminalDevice Reliability
This paper presents a methodology, based on 3D electro-thermal simulation, to investigate failures of vertical power MOSFET due to metallization aging of source terminal. The numerical results were correlated with experiment based on past study.
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