Photoluminescence of wide bandgap II–VI superlattices

Optical characterization of interface disorder in multi-quantum well structures

Claude Weisbuch, R. Dingle, A. C. Gossard et al. · Solid State Communications · 1981 · 450 citations

Natural Sciences, Materials Science, Physics +16

Recombination dynamics in GaAs/Al<inf>x</inf>Ga<inf>1- x</inf>As quantum well structures

J.E. Fouquet, R. D. Burnham · IEEE Journal of Quantum Electronics · 1986 · 78 citations

Engineering, Electrical Engineering, Physics +17

The MOCVD growth without prereaction of ZnSe and ZnS layers

P.J. Wright, P. J. Parbrook, B. Cockayne et al. · Journal of Crystal Growth · 1989 · 64 citations

Engineering, Materials Engineering, Materials Science +10

Blue luminescence of a ZnSe-ZnS0.1Se0.9 strained-layer superlattice on a GaAs substrate grown by low-pressure organometallic vapor phase epitaxy

Shigeo Fujita, Yoshinobu Matsuda, Akio Sasaki · Applied Physics Letters · 1985 · 53 citations

Engineering, Materials Science, Physics +17

Excitonic and edge emissions in MOCVD-grown ZnS films and ZnSe-ZnS superlattices

Yoichi Kawakami, Tsunemasa Taguchi, Akio Hiraki · Journal of Crystal Growth · 1988 · 53 citations

Natural Sciences, Materials Science, Physics +14