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A Short Synopsis of the Current Status of Porous SiC and GaN
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2005
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Materials EngineeringMaterials ScienceBrief Historical DevelopmentEngineeringShort SynopsisApplied PhysicsAluminum Gallium NitridePorous SicGan Power DevicePorous Gan MorphologiesCategoryiii-v SemiconductorCarbideCurrent Status
A brief historical development of porous SiC and GaN is given. SEM images of nine porous morphologies in 4H, 6H and 3C SiC are shown along with anodization details. Similarly, two porous GaN morphologies are presented. Applications and future prospects are discussed.