Improved relaxation-time formulation of collision terms for two-band hydrodynamic models

Transport equations for electrons in two-valley semiconductors

K. Blötekjær · IEEE Transactions on Electron Devices · 1970 · 810 citations

Engineering, Electrical Engineering, Condensed Matter Physics +16

An investigation of steady-state velocity overshoot in silicon

G. Baccarani, M.R. Wordeman · Solid-State Electronics · 1985 · 367 citations

Engineering, Electrical Engineering, Microelectronics +8

Two-dimensional numerical simulation of energy transport effects in Si and GaAs MESFET's

R.K. Cook, J. Frey · IEEE Transactions on Electron Devices · 1982 · 182 citations

Engineering, Electrical Engineering, Microelectronics +16

Two-dimensional hot-electron models for short-gate-length GaAs MESFET's

C.M. Snowden, Dany Loret · IEEE Transactions on Electron Devices · 1987 · 119 citations

Engineering, Electrical Engineering, Microelectronics +16

A temperature model for the GaAs MESFET

W.R. Curtice, Yong-Hoon Yun · IEEE Transactions on Electron Devices · 1981 · 114 citations

Engineering, Electrical Engineering, Microelectronics +16