Direct evidence for the existence of B_Asimpurity antisite centres in GaAs

Abstract

Infrared absorption lines at 628 and 601 cm-1 in GaAs have previously been attributed to the vibrations of BAs- acceptor centres. High-resolution spectroscopy now reveals fine structure on these lines similar to that reported for CAs- centres due to different nearest-neighbour combinations of 69Ga and 71Ga. This result provides a direct confirmation of the authors' earlier assignment of the lattice location of the boron atom.