Ti10Sb60Te30 for phase change memory with high-temperature data retention and rapid crystallization speed

Abstract

With a high crystallization temperature of 211 °C, Ti10Sb60Te30 phase change material exhibits a data retention of 10-yr at 137 °C, which is much better than that of usual Ge2Sb2Te5. No other phase is formed in Ti10Sb60Te30 film except hexagonal Sb2Te phase. For Ti10Sb60Te30-based phase change memory cell, as short as 6 ns electric pulse can fulfill the Set operation, demonstrating an extremely rapid crystallization speed of Ti10Sb60Te30. The programming cycles can reach 2.2 × 104 with very short Set/Reset pulses of 100 ns/50 ns.