Applied Physics Letters · 2003 · 47 citations · 10 references
Aluminium NitrideEngineeringRadio-frequency SputteringThermoelectricsThermal ConductivityElectronic DevicesThermodynamicsThermoelectric PropertiesMaterials ScienceMaterials EngineeringElectrical EngineeringIii-nitride SemiconductorsThermoelectric Power DeviceHigh Temperature MaterialsElectronic MaterialsApplied PhysicsThermoelectric MaterialRf SputteringThermal PropertyThermal Properties
With the aim of fabricating a thermoelectric power device using III-nitride semiconductors, we recently studied thermoelectric properties of Al1−xInxN and Al1−y−zGayInzN prepared by rf sputtering. For Al0.35In0.65N with 0.63-μm thickness, the maximum power factor was 3.63×10−4 W/mK2. For Al0.26Ga0.44In0.30N, the maximum power factor was 5.58×10−5 W/mK2.
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Thermoelectric Materials: New Approaches to an Old Problem
G. D. Mahan, B. C. Sales, Jeff Sharp · Physics Today · 1997 · 816 citations
Transport properties of pure and doped<i>M</i>NiSn (<i>M</i>=Zr, Hf)
Ctirad Uher, Jiong Yang, Siqing Hu et al. · Physical review. B, Condensed matter · 1999 · 614 citations