Graphene mobility enhancement by organosilane interface engineering

Abstract

In this study, SiO2 substrates engineered with three different types of organosilane self-assembled monolayers (SAM) have been proven to assist graphene transfer process. Bottom gate graphene field effect transistors with organosilane interface engineering are fabricated and tested. Improvement of carrier mobility is observed, which is attributed to organosilane SAMs' screening effect to charge impurity and surface polarized phonon scatterings and SAM molecules' π-π stacking interaction with graphene. In particular, graphene on phenyl-terminated organosilane SAM shows the best extrinsic field effect mobility of 2500 cm2 v−1 s−1, three times of its counterpart on SiO2.