SIMS analysis of the impurity diffusion of In in Cu

Abstract

Abstract Secondary-ion mass spectrometry (SIMS) has been used to study the bulk impurity diffusion of indium in monocrystalline copper. Sixteen samples were annealed at temperatures ranging from the vicinity of the melting point down to 602 K, i.e. to regions relevant in grain-boundary diffusion. The diffusion coefficients D obtained extend over a very wide range: between 3.3 × 10−12 and 6.0 × 10−21 m2s−1. The results agree well with earlier data, obtained in a more restricted temperature range. Of several evaluations of the raw SIMS data, that based on the matrix-normalized 111In+ signal is found to yield the most accurate Arrhenius parameters for the single-vacancy machanism in the low-temperature region: D 0 IV=0.219(+0.386, -0.140) × 10−4 m2 s−1 and Q IV=178.0±6.0 kJ mol−1. These results are compared with other values in the literature and discussed.