Mobility and Strain Effects on <110>/(110) SiGe channel pMOSFETs for High Current Enhancement

Abstract

Mobility and strain mechanisms of SiGe channel pMOSFETs fabricated with <110> channel direction on (110) Si substrate (<110>/(110) SiGe channel) have been studied in details for the first time. The combination of substrate orientation, high mobility channel material and extrinsic stained-Si process demonstrates the ultra high mobility enhancement and results in 80% current gain. The piezoresistance coefficients of <110>/(110) SiGe channel p-MOSFETs were also studied to analyze the strain effect on current enhancement. We also compared the derived piezoresistance coefficients results of SiGe channel on (100) and (110) surfaces