C. T. Tsai - Concepedia

Author

C. T. Tsai

United Microelectronics (Taiwan)

Also Known As

C T Tsai, C. T. Tsai, C.T. Tsai, Chiu-Pao Tsai, Chu-Cheng Tsai

Publications

298

Citations

H-Index

Concepts

All Affiliations

United Microelectronics (Taiwan)National Yang Ming Chiao Tung University United Microelectronics (United States)Chang Gung University

About

C. T. Tsai is an author at United Microelectronics (Taiwan) specializing in microelectronics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	220
2	Electrical Engineering	10	10	220
3	Applied Physics	9	9	210
4	Materials Engineering	2	2	64
5	Computer Engineering	1	1	10

C. T. Tsai

Publications

230

Citations

H-Index

Page 1

	Year	Citations
The observation of trapping and detrapping effects in high-k gate dielectric MOSFETs by a new gate current Random Telegraph Noise (IG-RTN) approach Chian-Sern Chang, Steve S. Chung, Y. S. Hsieh, Device ModelingElectrical EngineeringOxide QualityEngineeringPhysics	2008	59
Electrical characteristics of low temperature polysilicon TFT with a novel TEOS/oxynitride stack gate dielectric Kow‐Ming Chang, Wen-Chih Yang, C. T. Tsai IEEE Electron Device Letters Materials ScienceMaterials EngineeringElectrical EngineeringElectrical CharacteristicsEngineering	2003	38
Ultra low p-type SiGe contact resistance FinFETs with Ti silicide liner using cryogenic contact implantation amorphization and Solid-Phase Epitaxial Regrowth (SPER) Yu‐Chi Yang, N. Breil, C. Y. Yang, EngineeringSilicon On InsulatorSemiconductor DeviceElectronic DevicesAdvanced Packaging (Semiconductors)	2016	26
Strain Effects of Si and SiGe Channel on (100) and (110) Si Surfaces for Advanced CMOS Applications Wen-Tai Chiang, J. W. Pan, Pu-Chun Liu, Sige ChannelsElectrical EngineeringEngineeringMicrofabricationNanoelectronics	2007	18
The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices E. R. Hsieh, Po-Sheng Lu, Steve S. Chung, EngineeringBreakdown PathSemiconductor DeviceReliability EngineeringExperimental Demonstration	2014	17
New Observations on the Uniaxial and Biaxial Strain-Induced Hot Carrier and NBTI Reliabilities for 65nm Node CMOS Devices and Beyond Steve S. Chung, Da Huang, Y. J. Tsai, Semiconductor TechnologyElectrical EngineeringNbti ReliabilitiesEngineeringHardware Reliability	2006	14
The understanding of the trap induced variation in bulk tri-gate devices by a novel random trap profiling (RTP) technique Hsiu‐Min Tsai, E. R. Hsieh, Steve S. Chung, Bulk Tri-gate DevicesDefect ToleranceElectrical EngineeringHc StressEngineering	2012	13
New observations on the physical mechanism of Vth-variation in nanoscale CMOS devices after long term stress E. R. Hsieh, Steve S. Chung, C. H. Tsai, Long Term StressHc StressEngineeringRandom Trap FluctuationSilicon On Insulator	2011	13
A new observation of the germanium outdiffusion effect on the hot carrier and nbti reliabilities in sub-100nm technology strained-Si/SiGe CMOS devices Steve S. Chung, Y.R. Liu, C.F. Yeh, Hot CarrierElectrical EngineeringNbti ReliabilitiesEngineeringPhysics	2005	12
Mobility and Strain Effects on <110>/(110) SiGe channel pMOSFETs for High Current Enhancement J. W. Pan, P. W. Liu, T. Y. Chang,	2006	10

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