Journal of Applied Physics · 1976 · 150 citations · 13 references
Natural SciencesElectrical EngineeringMaterials ScienceCeramic MaterialsCeramicsElectronic MaterialsDevice CharacterizationDielectric CeramicsDielectricsElectrical Properties Of CeramicsMetal OxidesOxide SemiconductorsActivation EnergyMicrostructureOxide CeramicsOxide DielectricsSmall-signal Frequency ResponseTemperature DependenceVaristor BehaviorZinc Oxides
Measurements of the small-signal ac response of ZnO-based ceramic varistors are reported for frequencies f in the range 30<f<108 Hz and temperatures T in the range −200<T<300 °C. The high effective varistor dielectric constant results from the device microstructure with no detectable electrode contribution. The varistor leakage resistance ρp drops rapidly with frequency, a crude approximation being ρp∼1/ω. A broadened relaxation peak in the dissipation factor D=tanδ is observed at 3×105 Hz at room temperature. The peak has an exponential temperature dependence with an activation energy 0.36 eV.
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Low-Frequency Conductivity Due to Hopping Processes in Silicon
M. Pollak, T. H. Geballe · Physical Review · 1961 · 1.3K citations
<i>Progress in Semiconductors</i>
Alan Gibson, R. E. Burgess, P Aigrain et al. · Physics Today · 1958 · 534 citations
John W. Diggle, Ronald L. Meek · Journal of The Electrochemical Society · 1974 · 297 citations
Natural Sciences, Materials Engineering, Materials Science +11