Applied Physics Letters · 2008 · 48 citations · 18 references
EngineeringCrystal Growth TechnologyUncooled Detector OperationGrown SlsMidinfrared Inas∕gasb SuperlatticesDetector PhysicsOptical PropertiesMolecular Beam EpitaxyEpitaxial GrowthMaterials SciencePhotoluminescencePhysicsCrystalline DefectsResidual Background CarriersMidinfrared 7Natural SciencesSpectroscopyApplied PhysicsCondensed Matter PhysicsOptoelectronics
The midinfrared 7 ML InAs/8 ML GaSb superlattices (SLs) were grown by molecular beam epitaxy at growth temperatures between 370 and 430°C in order to study the intrinsic characteristic of background carriers. Grown SLs were all residual p type with carrier densities in the low 1011cm−2, and a minimum density of 1.8×1011cm−2 was obtained from the SL grown at 400°C. With increasing growth temperature, the in-plane carrier mobility decreased from 8740to1400cm2∕Vs due to increased interfacial roughness, while the photoluminescence intensity increased sixfold due to a decrease in the nonradiative defect densities.
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Auger lifetime enhancement in InAs–Ga1−<i>x</i>In<i>x</i>Sb superlattices
E. R. Youngdale, J. R. Meyer, C. A. Hoffman et al. · Applied Physics Letters · 1994 · 289 citations