Introduction of an interlayer between metal and semiconductor for organic thin-film transistors

Abstract

The concept of utilizing an organic interlayer between metal electrodes and underlying semiconductor is introduced for organic thin-film transistors. Inserting the interlayer between the source/drain electrodes and pentacene leads to improving the effective mobility by more than 1 order of magnitude and the on-off current ratio by almost 1 order of magnitude. The improvement can be attributed to a reduction in contact resistance that is made possible by reducing the energy barrier with the introduction of the interlayer. Simultaneous formation and patterning of both the electrodes and the interlayer is accomplished in one single-step transfer of a bilayer of metal on organic through a bilayer transfer technique based on rigiflex lithography.