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Effect of N2O/SiH4 flow ratios on properties of amorphous silicon oxide thin films deposited by inductively-coupled plasma chemical vapor deposition with application to silicon surface passivation

Chemical EngineeringEngineeringMicrofabricationNanoelectronicsSurface ScienceApplied PhysicsN2o/sih4 Flow RatiosAmorphous SiliconThin FilmsSilicon On InsulatorMicroelectronicsPlasma EtchingPlasma ProcessingChemical Vapor DepositionThin Film Processing