Electronic transport in n- and p-type modulation-doped GaInNAs/GaAs quantum wells

Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy

D. Jackrel, Seth R. Bank, H. B. Yuen et al. · Journal of Applied Physics · 2007 · 215 citations

Materials Science, Electrical Engineering, Epitaxial Growth +12

GaInNAs long-wavelength lasers: progress and challenges

J. S. Harris · Semiconductor Science and Technology · 2002 · 209 citations

Short-pulse Lasers, Photonics, Materials Challenges +15

Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen

S. R. Kurtz, Andrew A. Allerman, C. H. Seager et al. · Applied Physics Letters · 2000 · 163 citations · Full text

Categoryquantum Electronics, Engineering, Compensated Ingaasn +18

Parallel conduction in GaAs/Al_xGa_1-xAs modulation doped heterojunctions

Michael J. Kane, N. Apsley, David Anderson et al. · Journal of Physics C Solid State Physics · 1985 · 134 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

Intrinsic limits on electron mobility in dilute nitride semiconductors

Stephen Fahy, Eoin P. O’Reilly · Applied Physics Letters · 2003 · 97 citations

Semiconductors, Semiconductor Technology, Cross Section +10