Physical review. B, Condensed matter · 1992 · 12 citations · 12 references
Natural SciencesPhysicsCondensed Matter PhysicsQuantum MechanicsSemiconductor MaterialsElectron-phonon InteractionsElectronic Band StructureQuantum ConfinementQuantum WellsSemiconductor HeterostructuresSemiconductor PhysicsDouble HeterostructuresElectron-phonon ScatteringExcited Electronic StatesExcited StatesHeterostructuresPhonon-phonon InteractionsQuantum Well HeterostructuresQuantum Well States
The binding energy of a polaron confined in the quantum well of GaAs/${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Al}}_{\mathit{x}}$As double heterostructures is calculated as a function of the magnetic field applied in the direction of growth. We have also calculated the oscillator strength of electron-phonon interaction for transitions from various excited states to the ground state of the polaron. Every type of optical-phonon mode that can exist in such structures within the continuum model is considered separately. It is found that the magnetic field greatly enhances the interface-phonon part of the polaron effect. For quantum wells of widths 150 A\r{} or smaller, the interface modes dominate all polaronic phenomena we have encountered when B\ensuremath{\gtrsim}1 T. For quantum wells of widths up to 100 A\r{}, contributions from confined bulk phonon modes are almost negligible in magnetic fields B\ensuremath{\gtrsim}1 T.
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Electron–optical-phonon interactions in ultrathin GaAs/AlAs multiple quantum wells
K. T. Tsen, Keith Wald, T. Ruf et al. · Physical Review Letters · 1991 · 118 citations