Japanese Journal of Applied Physics · 2010 · 15 citations · 11 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsOptical MaterialsSemiconductor MaterialsEpitaxial GrowthNanostructured Electronic MaterialsQuantum DotsSemiconductor Crystal GrowthSemiconductor NanomaterialsSemiconductor PhysicsAnnealingCritical ThicknessMolecular Beam EpitaxyPhotoluminescencePhotoluminescence SpectroscopyPost-deposition AnnealingQuantum Dot MaterialsSemiconductor Quantum Dots
Low-density InAs quantum dots (QDs) with a large lateral size were grown on InP(001) by solid-source molecular beam epitaxy with a post-growth annealing process. A decrease in QD density with the amount of InAs deposited was shown by atomic force microscopy, and a density of 5×10 8 QDs/cm 2 was obtained for 0.8 monolayer InAs deposition. Moreover, we found that the growth mechanism of QDs changed significantly depending on the amount of InAs deposited in the vicinity of critical thickness, even if the same annealing condition was applied. Near-field photoluminescence spectroscopy of single QDs demonstrated the high optical qualities of low-density QDs.
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A Quantum Dot Single-Photon Turnstile Device
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On-demand single-photon source for 1.3μm telecom fiber
M. B. Ward, O. Z. Karimov, D. C. Unitt et al. · Applied Physics Letters · 2005 · 131 citations