Applied Physics Letters · 2012 · 46 citations · 16 references
EngineeringMaterials EngineeringMaterials ScienceCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsDopingSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsThermal Properties Of SemiconductorsWide Band Gap SemiconductorsConductivityP-type ConductivitySemiconductor ConductivitySemiconductor DopingValence BandValence Band Structure
We report p-type conductivity in nominally undoped GaAs1–xBix epilayers for a wide range of Bi-concentrations (0.6% ≤ x ≤ 10.6%). The counterintuitive increase of the conductivity with increasing x is paralleled by an increase in the density of free holes by more than three orders of magnitude in the investigated Bi-concentration range. The p-type conductivity results from holes thermally excited from Bi-induced acceptor levels lying at 26.8 meV above the valence band edge of GaAs1−xBix with concentration up to 2.4 × 1017 cm−3 at x = 10.6%.
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Composition dependence of photoluminescence of GaAs1−xBix alloys
Xianfeng Lu, Daniel A. Beaton, Ryan B. Lewis et al. · Applied Physics Letters · 2009 · 188 citations
GaBiAs: A material for optoelectronic terahertz devices
K. Bertulis, A. Krotkus, G. Aleksejenko et al. · Applied Physics Letters · 2006 · 149 citations