Electroabsorptive modulators in InGaAs/AlGaAs

B. Pezeshki, Susan Lord, J. S. Harris

Applied Physics Letters · 1991 · 45 citations · 14 references

Concepts

Abstract

Theoretical and experimental work shows that electroabsorption improves and the quantum-confined Stark effect becomes stronger in In0.2Ga0.8As/AlxGa1−xAs quantum wells as the aluminum concentration (x) is increased in the barriers. This improved electroabsorption was used in a reflection modulator that exhibited the largest reported reflectivity change of 77%.

References

14