Journal of Applied Physics · 1964 · 332 citations · 6 references
Natural SciencesElectrical EngineeringMaterials ScienceOpticsOptoelectronicsSemiconductor MaterialsOptical Properties Of MaterialsOptical Properties Of SemiconductorsOptical Properties Of SolidsOptical ResonatorsRefractive IndexSemiconductor LasersBand GapFabry-perot ResonatorsLasersOptical Band GapRefractionResonator ModesTemperature Dependence Of Laser Performance
The refractive index of GaAs, as measured by the prism refraction method, is reported here for photon energies from 0.7 eV up to the absorption limit set by the band gap, for temperatures of 300°, 187°, and 103°K. The results are compared with the previous data (obtained only for room temperature), and are used to show that the spacing of emission lines of GaAs lasers corresponds to that of the axial modes of a Fabry-Perot resonator.
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Optical Properties of Semiconductors
H. R. Philipp, Hannelore Ehrenreich · Physical Review · 1963 · 2.1K citations
Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eV
M. D. Sturge · Physical Review · 1962 · 1.1K citations