Journal of Applied Physics · 1986 · 35 citations · 8 references
Natural SciencesMaterials EngineeringMaterials ScienceCrystal StructureElectronic MaterialsSemiconductor MaterialsChemical Vapor DepositionCrystal GrowthEpitaxial GrowthSemiconductor Crystal GrowthSemiconductor HeterostructuresLow-pressure Chemical Vapor DepositionMetalorganic Chemical Vapor DepositionQuantum Well Growth TechniquesQuantum Well StructuresSubstrate Orientation EffectsX-ray Diffraction Analysis
Ga0.47In0.53As-InP multiquantum wells grown by low-pressure metalorganic chemical vapor deposition on garnet (GGG=Gd3Ga5O12 with a=12.383 Å) substrates are presented for the first time. The x-ray diffraction pattern shows that the orientation of the epitaxial layer is (111) while the underlying substrate orientation is (100). The photoluminescence at 77 K is due to the GaInAs layers.
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Lattice match: An application to heteroepitaxy
A. Zur, T. C. McGill · Journal of Applied Physics · 1984 · 388 citations
Manijeh Razeghi, J.P. Duchemin, J.C. Portal · Applied Physics Letters · 1985 · 33 citations