Chemically Vapor Deposited Tungsten for Semiconductor Metallizations

C. M. Melliar‐Smith, A. C. Adams, R. Kaiser, R.A. Kushner

Journal of The Electrochemical Society · 1974 · 44 citations · 0 references

Concepts

Abstract

The properties of CVD tungsten films, produced by the hydrogen reduction of or , have been investigated to determine the suitability of the films for use as silicon integrated circuit metallizations. Both low pressure and atmospheric pressure flow system have been investigated.