Combinatorial Optimization of a Molecular Glass Photoresist System for Electron Beam Lithography

Abstract

Electron beam lithography is a powerful technique for the production of nanostructures but pattern quality depends on numerous interacting process variables. Orthogonal gradients of resist composition, baking temperatures, and development time as well as dose variations inside writing fields are used to prepare ternary combinatorial libraries for an efficient stepwise optimization of a molecular glass negative tone resist system.