Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1990 · 161 citations · 0 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsSurface ScienceEpitaxial GrowthScanning Probe MicroscopySemiconductor Crystal GrowthSemiconductor PhysicsSemiconductor SurfacesSilicon MaterialsAntiphase BoundariesEpitaxial Film GrowthSiliconSilicon Epitaxy
The epitaxial growth of silicon on Si(001)-(2×1) substrates at temperatures between 580 and 850 K is studied using scanning tunneling microscopy (STM). The growth is strongly anisotropic, forming long narrow structures only a few dimers wide but more than 100 Å long. Models are proposed for the two types of antiphase boundaries that are observed on the epitaxially grown surfaces.