IEEE Electron Device Letters · 1985 · 82 citations · 11 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportComplementary Metal-oxide-semiconductor TechnologyDevice CharacterizationDevice ReliabilityMetal-oxide-semiconductor Field-effect TransistorsSemiconductor ReliabilityGate Oxide DegradationGate Oxide ReliabilityHot Carrier EffectsHot Carrier InjectionHot-carrier DegradationP-n Junction CharacteristicsReliability DegradationTransconductance
The relationship between hot electrons and holes and the degradation of p- and n-channel MOSFET's is clarified by experimentally determining where along the channel the SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> is most affected by each type of carrier. Transconductance degradation is found to be caused by hot-hole injection in pMOSFET's, and by hot-electron injection in nMOSFET's.
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