Relationship between hot-electrons/Holes and degradation of p- and n-channel MOSFET's

Abstract

The relationship between hot electrons and holes and the degradation of p- and n-channel MOSFET's is clarified by experimentally determining where along the channel the SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> is most affected by each type of carrier. Transconductance degradation is found to be caused by hot-hole injection in pMOSFET's, and by hot-electron injection in nMOSFET's.