An X‐Ray Photoelectron Spectroscopy Study of CF 4 / H 2 Reactive Ion Etching Residue on Silicon - Concepedia

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An X‐Ray Photoelectron Spectroscopy Study of CF 4 / H 2 Reactive Ion Etching Residue on Silicon

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1987

Year

J. H. Thomas, X. C. Mu, Stephen J. Fonash

Journal of The Electrochemical Society

Materials ScienceChemical EngineeringOxide‐coated Silicon SurfaceEngineeringCf 4Surface ScienceApplied PhysicsAngle XpsChemistrySilicon On InsulatorPlasma EtchingChemical Vapor DepositionReactive Ion

Abstract

reactive ion etching residue deposited on silicon was studied using x‐ray photoelectron spectroscopy (XPS) and grazing angle XPS. Deposits are shown to be primarily a polymer consisting of , , and CH/CC functionalities. The polymer surface appears rich in graphite which is produced by ion bombardment of the polymer surface. This film is deposited on an oxide‐coated silicon surface.