Periodic Step and Terrace Formation on Si(100) Surface during Si Epitaxial Growth by Atmospheric Chemical Vapor Deposition

Abstract

The surface structure of Si epitaxial film growth achieved by atmospheric chemical vapor deposition on Si(100) with a misorientation is studied by angle-resolved light scattering (ARLS) and atomic force microscopy (AFM). The Si epitaxial surface has a periodic structure consisting of terraces and atomic-steps. The terrace length depends on the substrate misorientation. The step height is independent of the substrate misorientation, and is about 0.3 nm, which corresponds to the double-layer step. The periodic structure is formed during the atmospheric growth process.