Material and fabrication-related limitations to high-power operation of GaAs/AlGaAs and InGaAs/AlGaAs laser diodes

Gallium Arsenide and Related Compounds

Bob Wilson · Physics Bulletin · 1973 · 694 citations

Inorganic Chemistry, Physics, Pp Ix +9

Mechanism of Fermi-level stabilization in semiconductors

W. Walukiewicz · Physical review. B, Condensed matter · 1988 · 171 citations · Full text

Semiconductors, Semiconductor Technology, Engineering +11

Degradation of III–V Opto‐Electronic Devices

Osamu Ueda · Journal of The Electrochemical Society · 1988 · 119 citations

Gradual Degradation, Wide-bandgap Semiconductor, Electrical Engineering +15

2.0 W CW, diffraction-limited operation of a monolithically integrated master oscillator power amplifier

R. Parke, David Welch, A. Hardy et al. · IEEE Photonics Technology Letters · 1993 · 93 citations

Photonics, Electrical Engineering, Engineering +13

Arrhenius parameters for the rate process leading to catastrophic damage of AlGaAs-GaAs laser facets

A. Moser, E.E. Latta · Journal of Applied Physics · 1992 · 74 citations

Optical Materials, Engineering, Laser Applications +18