Japanese Journal of Applied Physics · 1981 · 63 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor DevicesLight-emitting DiodesOptical AmplifiersOptoelectronic DevicesOptoelectronic MaterialsSemiconductor HeterostructuresSemiconductor LasersHeterojunction DevicesHeterojunctionsHeterostructure OptoelectronicsOptical GainOptical Gain In SemiconductorsOptical Gain MaterialsPhototransistorsSemiconductor Optical Amplifiers
A very high optical gain (∼900) was obtained near the 1.1-µm wavelength by the InGaAsP-InP heterojunction phototransitor. The light amplifier, which is an integral device of a heterojunction phototransistor and a double-heterojunction laser (or light-emitting diode with confining layers), is presented. The optical bias method is described for the amplification of a weak incident light.
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GaAs-GaAlAs phototransistor/laser light amplifier
H. Beneking, N. Grote, W. Roth et al. · Electronics Letters · 1980 · 44 citations