Applied Physics Letters · 1970 · 28 citations · 12 references
Materials ScienceIi-vi SemiconductorAcceptor LuminescenceIon ImplantationEngineeringPhotoluminescenceLuminescence EfficiencyAlkali ImpuritiesChemistryLuminescence PropertyCrystallographyElectrochemistryOptoelectronics
Na, Li, and Ne have been implanted into CdS in order both to study the luminescence and to attempt to achieve type conversion. Acceptor luminescence, due to the alkali impurities, has been produced with significant intensity, but type conversion has not been observed. The luminescence efficiency and the induced emission intensity as a function of annealing temperature have been obtained.
12
Fundamental Absorption Edge in Cadmium Sulfide
David Dutton · Physical Review · 1958 · 275 citations
HIGH CONDUCTIVITY <i>p</i>-TYPE CdS
F. Chernow, G.W. Eldridge, G.F. Ruse et al. · Applied Physics Letters · 1968 · 67 citations
Semiconductors, Materials Science, Electrical Engineering +13